High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5)

Electron spin resonance analysis of defects generated by ion bombardment in different low-permittivity (low-κ) SiO2-based insulating films reveals common types of encountered defects: The EX center (g = 2.0025) and a broad line centered at g = 2.0028 tentatively associated with dangling bonds of carbon atoms backbonded to C or Si atoms. The efficiency of defect generation varies, depending on the type of bombarding ions and the technology of insulator synthesis. However, the two identified defects are observed in all studied cases, suggesting that these defects correspond to the most stable atomic configurations resulting from the network damage of the low-κ materials.