Deep states in silicon-on-insulator substrates prepared by oxygen implantation using current deep level transient spectroscopy

Current deep level transient spectroscopy was applied using enhancement n-channel metal-oxide-semiconductor field-effect transistors fabricated in silicon-on-insulator substrates (prepared by oxygen implantation) to study the deep levels existing in the substrates. The current transients are not affected by the large series resistances which affect the measurement of capacitance transients on thin films. For the transistors used in this work a hole trap was found with energy ET=0.63 eV above the valence-band edge. The concentration and capture cross section of this state were estimated to be 1014 cm−3 and 10−16 cm2, respectively.