Equipment for in situ resistivity and x-ray diffraction studies during ion implantation at temperatures between 4 K and 1270 K

An instrument is presented which was designed for comprehensive in-situ analysis of phase formation and transformation during the ion implantation process. An implanter end station with heatable He-cryostat as a sample holder was built. A temperature range from 4 to 1270 K is covered by the sample holder so that temperature can be varied during implantation or subsequent annealing in high vacuum. Both x-ray diffraction and four-point resistivity measurement are installed as in-situ investigation techniques. In this way a detailed study of structural changes and defect kinetics during ion bombardment is now possible. The whole instrument has been successfully tested. Examples of carbon ion implantation in titanium and iron are given.