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It is experimentally found that the maximum drift velocity of electrons in quantum wells of differently arranged AlGaAs/GaAs heterostructures and pseudoamorphous Al 0.36 Ga 0.64 As/In 0.15 Ga 0.85 As heterostructures is higher than the maximum drift velocity of electrons in bulk materials. It is established that no negative differential conductivity is exhibited by the field dependence of the drift velocity of two-dimensional electrons in GaAs and In 0.15 Ga 0.85 As. The drift velocity in the GaAs quantum well is saturated in fields several times higher than the field corresponding to the Γ- L intervalley transitions of electrons in bulk GaAs.
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Mokerov et al. (2009) studied this question.
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