Answers are grounded in this paper and cite their sources.
Temperature‐dependent ac current‐voltage‐capacitance characteristics between 90 K and 440 K were investigated for InGaN/GaN multi‐quantum‐wells blue light‐emitting diodes (LEDs) under high forward bias. Under large forward current, deep saturation of junction voltage Vj was observed over a wide temperature range. It was found that Vj corresponds to the separation energy of electron and hole quasi‐Fermi levels and its temperature dependence could be well explained by the flat band model. After the pinning of quasi‐Fermi levels, the forward current is dominated by the drift current in the p ‐GaN access layer. Considering Poole‐Frenkel effect, a quantitative model was developed to reproduce the cur‐rent‐voltage characteristics of LEDs under high forward bias. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
No takes yet. Share an insight, caveat, or question.
Yang et al. (2014) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: