A fabrication process to create a zinc tin oxide (ZTO) thin-film-transistor (TFT) enhancement/depletion inverter using 15-mum channel lengths is developed. Both enhancement- and depletion-mode staggered bottom-gate ZTO TFTs are simultaneously fabricated on a single substrate using a single sputter target and postdeposition anneal step. At a rail voltage of 10 V, this inverter has a gain of 10.6 V/V.
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Heineck et al. (2009) studied this question.
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