ZnO thin film has been epitaxially grown on the (111) plane of the diamond substrate by rf magnetron sputtering at substrate temperature as low as 260 °C. The crystallinity was examined by x-ray diffraction and reflection high-energy electron diffraction. It was found that the smallest standard deviation angle estimated from the x-ray rocking curve of the ZnO(0002) peak was 0.27° whereas the mismatch of the lattice parameter between film and substrate is 28.8%. The epitaxial relationship between ZnO film and the diamond is determined as [112̄0] ZnO//[1̄01] diamond.
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Hachigo et al. (1994) studied this question.
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