Thin-film transistors (TFTs) were fabricated with an aluminum oxide-doped tin oxide (SAO) channel, deposited by cosputtering and targets. The effect of the content on the device performance of the -based TFTs was investigated. The TFTs with a nondoped channel did not show a promising performance. However, the field-effect mobility and threshold voltage of the SAO TFTs with an Al concentration of about 0.9 atom % were improved to and , respectively. This improved device performance was attributed to the greatly reduced carrier concentration induced by the carrier trapping at the Al impurity sites.
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Huh et al. (2009) studied this question.
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