Fabrication and characterization of InGaN p-i-n homojunction solar cell

In x Ga 1 -x N p-i-n homojunction solar cells with different In content are studied. The measured open circuit voltages (Voc) are 2.24, 1.34, and 0.96 V, for x=0.02, 0.12, and 0.15, respectively. By comparing the x-ray rocking curves, the I-V characteristics and the external quantum efficiencies, it’s demonstrated that the deterioration of InGaN crystal quality for larger In contents causes the decrease of Voc. The result demonstrates that reduction of defect is a key factor in the fabrication of nitride solar cell.