X-ray diffraction measurements of internal strain in Si nanowires fabricated using a self-limiting oxidation process

We demonstrate x-ray diffraction measurements of internal strain in Si nanowires that were fabricated using a self-limiting oxidation process. Rod-shaped scattering around the 111 Bragg point due to interference effects from the Si nanowires were observed, which are robust reflections for incoherent displacement of the wires. From the shifts of the scattering in reciprocal space, the strain was estimated to be 1.0–1.5×10−3 for the sample oxidized at 800°C for 300min.