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January 1, 1996IEEE Transactions on Electron Devices

Size dependence of the characteristics of Si single-electron transistors on SIMOX substrates

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YTYasuo TakahashiHokkaido University of ScienceHNH. NamatsuNTT (United States)KKK. KuriharaKyoto Women's University

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Takahashi et al. (1996) studied this question.

synapsesocial.com/papers/6a8c28abc17aa55aa6e8cd6fhttps://doi.org/10.1109/16.506771
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