A transverse junction stripe laser structure with a very low parasitic capacitance, compatible with an entirely planar laser-MESFET integration, is presented. The laser, obtained by two successive n (S) and p (Zn) diffusions across undoped AlGaAs/GaAs double heterostructure layers, has a threshold current of Ith = 55 mA. A very low parasitic capacitance Cs = 0.6 pF is measured, with a corresponding rolloff time constant of tr = 9 ps.
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Brillouet et al. (1988) studied this question.
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