A V-Band Three-State Phase Shifter in CMOS-MEMS Technology

A V-band CMOS-MEMS switchable phase shifter based on reflection-type topology is presented in this work. The phase shifter is fabricated in 0.18-μm CMOS process with a chip size of 1.04 mm2, wherein the suspended MEMS structure is released through the post-CMOS micromachining. Three discrete phase states, including 0°, 89°, 144° at 65 GHz, can be achieved by the bi-directional fishbone actuators under 46-V actuation voltage. The measured insertion loss is 2.2±1 dB and the return loss is better than 14 dB over the 55-65 GHz frequency range, demonstrating a great potential in many applications.