B implanted emitters are investigated in the back junction cell configuration and their material properties are tested in double side implanted Si wafers. B has been implanted at 5 keV at various dose conditions varying from 1 × 1014 up to 3 × 1015 at./cm2 and activated at 1000°C for 10 min. N‐type 8 × 8 cm2 mono‐crystalline cells are fabricated and measured. Both fill factor and efficiency increase for high‐B doses. However, at 1015 at./cm2 B dose the Voc drops, which is in agreement with lifetime degradation in the wafer. Defect evolution simulations of BnIm clusters formation is correlated with lifetime degradation.
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Pawlak et al. (2011) studied this question.
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