The migration of implanted 9 Be in (100) semi‐insulating during thermal annealing has been studied using secondary ion mass spectrometry. Under typical annealing conditions for ( , ) we have observed that implanted 9 Be is a rapid diffusant in semi‐insulating for fluences as low as . Redistribution of the compensating impurity (Fe or Cr) has also been observed. In several respects Cr redistribution differs from that of Fe. Twin‐peaked structures appear in the impurity profiles of 550°C anneals of 100 keV, 10 15 cm −2 9 Be implanted materials. Models for this phenomenon are discussed. Correlations are noted between 9 Be and compensating impurity profiles in annealed, high fluence implanted samples. Flat tails of 9 Be extending over several microns are observed in semi‐insulating .
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Oberstar et al. (1982) studied this question.