S-parameters measurements were carried out on diamond-based FET devices with a p-type channel induced by hydrogen surface termination extracting fTand fmaxfor devices with gate lengths ranging from 5 μm to 0.2 μm. For the 0.2 μm gate length FET fT=11.55 GHz and fmax(MAG)=33.3 GHz values were obtained. High fmax(MAG)/fTratios of above 2.5 were obtained for all devices. Further downscaling may result in an fTabove 20 GHz and in addition, an fmax(MAG) above 50 GHz.
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Aleksov et al. (2002) studied this question.
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