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April 1, 2008Japanese Journal of Applied Physics

Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics

Yongxun Liu Tetsuro Hayashida Takashi Matsukawa Kazuhiko Endo Meishoku Masahara S. O’uchi Kunihiro Sakamoto Kenichi Ishii Junichi Tsukada Yuki Ishikawa Hiromi Yamauchi Atsushi Ogura Eiichi Suzuki

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Abstract

Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics, Liu, Yongxun, Hayashida, Tetsuro, Matsukawa, Takashi, Endo, Kazuhiko, Masahara, Meishoku, O'uchi, Shinich, Sakamoto, Kunihiro, Ishii, Kenichi, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Ogura, Atsushi, Suzuki, Eiichi

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Cite This Study

Liu et al. (2008) studied this question.

synapsesocial.com/papers/6ab618b49f5e94797d863ffe https://doi.org/10.1143/jjap.47.2433

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