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The influence of an electric field created by a gate potential of the silicon quantum computer on the hyperfine interaction constant (HIC) is obtained. The errors due to the technological inaccuracy of the location of donor atoms under a gate are evaluated. The energy spectra of an electron-nuclear spin system of two interacting donor atoms with various values of HIC are calculated. The presence of two pairs of anticrossing levels in the ground electronic state is shown. The parameters of the structure at which the error rate can be greatly minimized are found.
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