Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon

We report on structural and optical properties of a (In x Ga ) 2 O 3 thin film having a monotonic lateral variation of the indium content x ( ). The growth condition for each In content is similar allowing precise determination of the dependence of material properties on x . For low In content ( ) the thin film has monoclinic crystal structure; for highest In contents ( ) the cubic bixbyite phase is predominant. For intermediate alloying we observe additionally the rhombohedral InGaO 3 (II) crystallographic phase. The optical band-gap decreases systematically with increasing indium content and has a linear dependency on x for parts of the sample having the monoclinic phase, only. Further, properties of Pt Schottky diodes are reported for monoclinic (In x Ga ) 2 O 3 and photo response measurements for