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The effect of intense millimeter and submillimeter radiation on thin and narrow niobium films in the resistive state is studied. It is shown that the excess resistance emerging due to radiation, as well as the dependence of relaxation time of the resistance on radiation intensity and transport current can be attributed to heating of the electrons. The experimental results are found to be in quantitative agreement with the model of uniform heating of electrons.
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Gershenzon et al. (1988) studied this question.