Surface reflectance spectra are observed for H-adsorbed GaAs (001) surfaces. Atomic hydrogen produced with a hot tungsten filament is adsorbed on the (2×4) surface, converting it to (1×1). Reflectance difference (anisotropy) spectra show an enhanced peak at 2.8 eV upon H adsorption at room temperature, which is not consistent with the notion that this peak originates from As dimers. Analysis of surface photoabsorption spectra show that surface dielectric changes along [1̄10] for H adsorption and for Ga deposition can be represented by a superposition of a change at the bulk critical points E1,E2,E0′ of GaAs and a broad feature centering at 2.5–2.7 eV.
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Uwai et al. (1996) studied this question.
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