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Two kinds of epitaxial structures were grown by standard pulsed laser deposition on (001) Si, namely La(0.7)Sr(0.3)MnO(3)/Bi(4)Ti(3)O(12)/CeO(2) /YSZ/Si (BTO-based), and La(0.7)Sr(0.3)MnO(3)/SrTiO(3)/CeO(2) /YSZ/Si (STO-based) multilayers. The samples were investigated by means of x-ray diffraction, transmission electron microscopy, magnetic and transport measurements. The Curie temperature T(C) of the BTO-based samples was found to be higher (360 K) than for the typical reference epitaxial LSMO film grown on (001) SrTiO(3) single crystal (345 K), due to high compressive in-plane strain. The STO-based samples show high structural quality, low roughness and high T(C) (350 K), making them interesting candidates for use in innovative LSMO-based bolometers or spintronic devices operating at room temperature.
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Perna et al. (2009) studied this question.
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