The first application of the second harmonic generation (SHG) technique to investigate the structure of a-Si:H films is reported. Dependence of SHG on the type of substrate material and the temperature during deposition has been observed. The origin of SHG is discussed. A stress model is proposed to explain the experimental results. It is suggested that the second harmonic is generated in a strained layer close to the substrate.
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Alexandrova et al. (2000) studied this question.
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