New developments in spectroscopic ellipsometry (1.5{≤}h{ν}{≤}4.3 eV) now provide quantitative information on thin films with a time resolution of 16 ms. We report submonolayer sensitivity to a surface smoothening effect associated with nuclei coalescence in the early stages of hydrogenated amorphous silicon (a-Si:H) preparation by plasma-enhanced chemical vapor deposition. An investigation of a-Si:H prepared on c-Si and Cr substrates under different conditions of substrate temperature and plasma power discloses a clear correlation between the magnitude of this effect and the ultimate bulk properties of the material.
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Li et al. (1992) studied this question.
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