We have calculated the ultrasonic attenuation by acceptor holes in Si. It was found that (1) the splitting of the quartet of acceptor ground states by random local strains is important for explaining the experiments; (2) the Raman (two-phonon) process in the relaxation attenuation predominates over the one-phonon process at higher temperatures; and (3) the "resonant" attenuation becomes important at higher temperatures.
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Suzuki et al. (1972) studied this question.
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