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A simple theory of charge buildup and bistability is used to show that the new hysteresis and bistability in the current-voltage behavior recently reported in AlGaSb/InAs/AlGaSb double-barrier structures is directly related to the bistability and hysteresis in the hole population of the AlGaSb barrier layer. This occurs well before the resonant-tunneling-current peak.
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Buot et al. (1994) studied this question.
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