Robust laser-induced complete suppression of resonant tunneling via exceptional points

Resonance tunneling diodes leverage quantum coherence to enable electron transport through classically forbidden regions, forming the backbone of high-speed and terahertz electronics. In this work, we demonstrate that laser-induced exceptional points, i.e. non-Hermitian degeneracies, can be exploited to controllably suppress electron tunneling in Resonance tunneling diodes. We have established optimal design principles for achieving robust and complete suppression of the resonance peak in the transmission profile of an electron scattering through a double barrier potential, representing the conduction band of an resonance tunneling diode structure. This was supported by our derivation of an analytical expression capturing this quantum exceptional point phenomenon. Numerical simulations confirm that this effect remains remarkably stable across variations in laser frequency and intensity. To the best of our knowledge, our findings demonstrate a degree of control over quantum interference that enables modulation of quantum transport and current in resonance tunneling diodes, paving the way toward the future realization of dynamic quantum switches. The authors derive design principles and an analytical framework for controlling electron transport in laser-driven resonance tunneling diodes through exceptional points. They show that tuning the laser to an exceptional point completely suppresses resonance tunneling, enabling dynamic control of quantum transport and current.