A 4-μm-thick sample containing 50 GaAs/AlGaAs asymmetric coupled quantum wells was driven with a strong terahertz (THz) electric field of frequency ωTHz and probed with a near-infrared (NIR) laser of frequency ωNIR. The THz beam modulated the probe to generate sidebands at ωNIR+nωTHz, where n is an integer. Up to 0.2% of the NIR laser power was converted into the n=+1 sideband at 20 K, and sidebands were observed up to room temperature. The strong THz fields also induced changes in the NIR absorption of the sample.
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Carter et al. (2004) studied this question.
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