Fluorocarbon films with low dielectric constants and high thermal resistance have been developed by plasma‐enhanced chemical vapor deposition (PECVD) using gas mixtures of fluorocarbons ( e.g. , ), hydrocarbons ( e.g. , ), and/or hydrogen. A conventional parallel plate electrode PECVD system was used as the reactor. We report dielectric constants lower than 2.4 with these fluorinated films. The thermal decomposition temperature was higher than 400°C and the glass transition temperature ( Tg ) was also higher than 450°C. This enables the use of organic films with very low dielectric constant in actual devices.
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Takeishi et al. (1997) studied this question.