Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics

In this work, we report an extensive experimental and theoretical investigation of the voltage and temperature dependence of dielectric breakdown for both high-κ/SiO2 dual-layer and SiO2 single-layer dielectrics. Based on a two-step formulation of the breakdown process, a quantitative physics-based hydrogen release-reaction model is proposed. The model is successfully compared to the experimental data over a wide range of voltage, temperature, and thickness and considering both stress polarities. The model resolves three outstanding experimental observations: (1) the decrease of voltage acceleration exponents with increasing temperature, (2) the non-Arrhenius temperature dependence at low voltages, and (3) the large activation energy of ∼1.0 eV observed at high temperatures.