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Herein, a Ga2O3-based indium tin oxide (Ga2O3:ITO) thin film is proposed as a replacement for ITO in near-ultraviolet light-emitting diodes (NUV LEDs), and its electrical and optical properties are optimized. The measured sheet resistance and optical transmittance of the Ga2O3:ITO thin film were 49 Ω/sq and 93.8% at 405 nm wavelength after optimization, whereas those of ITO films were 52 Ω/sq and 84.4% at that wavelength, respectively. In addition, we found that at 20 mA the output power of the NUV LEDs with Ga2O3:ITO top electrodes was 55% greater than that of those with ITO top electrodes.
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Kim et al. (2014) studied this question.
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