Study of laser excited vibration of silicon cantilever

In this paper an interferometric setup called “thermoelastic microscopy” has been used to measure the vibration response of the semiconductor cantilevers under modulated laser thermal source. The small vibration amplitude has been detected well below 10 pm magnitude in accurate adjustment conditions. The results showed that experimental responses have a good agreement with the theoretical ones. Also from the analysis we could conclude that the signal amplitude has a power functional dependence on the modulation frequency and that the phase angle linearly depended on the square root of modulation frequency.