Characterization of Ge[sub 1−x]Te[sub x] Chalcogenide Thin Films Deposited by MOCVD for Phase Change Memory Applications

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The chalcogenide thin films for phase change memory applications were prepared on substrates by metallorganic chemical vapor deposition (MOCVD) using , , and precursors. The films were grown by the tellurium deposition at on Ge films deposited on a TiAlN electrode in the presence of Sb at . The film growth by the tellurium deposition on Ge films depends on both the tellurium deposition temperature and the deposition time. The Ge and Te in the films deposited on a confined structure of 500 nm in diameter and 200 nm in depth shows a homogeneous distribution, and their distribution was consistent with the films deposited on a planar structure.