Transparent Conductive Thin Films of Sn Doped In2O3 Grown by Aerosol‐Assisted CVD Using InIII Acetylacetonate with 5 mol % SnIV Bis‐acetylacetonate Dibromide Dissolved in Acetylacetone

An aerosol generated by the ultrasonic oscillation of either a 0.2 M or a 0.02 M solution is supplied through two furnaces onto heated glass substrates of Corning #1737 to coat thin films of indium tin oxide (ITO; Sn‐doped In2O3). The electrical resistivity, the carrier concentration, the Hall mobility, and the optical bandgap are determined as functions of the film thickness, d. These results are independent of d for ITO using the 0.2 M solution, with values of (1–2) × 10–4 Ω cm, (1–3) × 1021 cm–3, (20–50) cm2 V–1 s–1, and 4.0∼4.1 eV, respectively. For ITO films prepared using the 0.02 M solution, the mobility decreases with increasing d of more than 50 nm, which corresponds to a lowering of the film crystallinity.