We show that by delta doping a deep depletion layer at a SrTiO3/CaHfO3 interface with La, it is possible to achieve a separation of physical dopants from the current transport layer in SrTiO3. This allows us to construct an epitaxial top-gate field-effect transistor that can switch a channel with a physical dopant density of ∼1014 cm−2 between insulating and metallic states with a finite threshold shift and without carrier mobility degradation at low temperature.
No takes yet. Share an insight, caveat, or question.
Nishio et al. (2011) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: