We designed multifunctional measuring system for ferroelectric thin films which differs from analogous ones by open architecture. Special model taking into account interface layers close to metal electrodes has been suggested. These procedures have been used for investigation of ferroelectric structures based on Pt/PbZr 0.52 Ti 0.48 O 3 /Pt/Ti/SiO 2 /Si (PZT). Appreciable asymmetric capacitance-voltage curves and hysteresis loops behavior has been obtained for some specimens. These results provide an explanation for the models, which describes the Pt/PZT/Pt structure as a series circuit of three depletion layer capacitors. To explain the electrical asymmetries, we assumed that they came from the interfacial state difference between the top Pt/PZT and the bottom PZT/Pt. Following this method for the high field voltage, we could obtain values of associated parameters, such as the depletion layer capacitance, bulk permittivity, and space-charge density.
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Maleto et al. (2003) studied this question.