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We have investigated the high-temperature thermoelectric properties of the layered compound LaO1−xFxBiS2. The electrical resistivity of LaOBiS2 showed an anomalous behavior; a metal-semiconductor transition was observed around 270 K. It was found that the value of the electrical resistivity decreased with F substitution. The Seebeck coefficient decreased with increasing F concentration. The highest power factor of 1.9 μW/cm K2 at 480 °C was obtained for LaOBiS2.
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