Highly Stable Radiation-Hardened Resistive-Switching Memory

In this letter, the resistive random access memory (RRAM) with metal–insulator–metal structure is investigated for the first time under radiation conditions. The fabricated Cu-dopedHfO₂-based RRAM devices are found to have immunity from⁶⁰Co\ γray of various dose ranges. The basic RRAM parameters such as high-resistance state, low-resistance state, SET/RESET voltages, operation speed, and endurance have nearly no degradation after⁶⁰Co\ γray treatment with a total dose as high as3.6 × 10⁵\ rad(Si). Furthermore, a retention characteristic of10⁵s is also achieved during radiation. The highly stable characteristics of Cu-dopedHfO₂-based RRAM devices under radiation provide RRAM a great potential for aerospace and nuclear applications.