Growth of In‐polar and N‐polar InN nanocolumns on GaN templates by molecular beam epitaxy

In‐polar and N‐polar InN nanocolumns were grown on Ga‐polar and N‐polar GaN templates by molecular beam epitaxy, respectively. High N/In flux ratio was preferred for successful growth of the InN nanocolumns in both polarities. The maximum growth temperature of N‐polar InN columns was about 100 °C higher than that of In‐polar ones. The density and diameter of columns could be controlled by varying the growth temperature. The InN columns in different polarities showed different morphologies. In comparison to InN film, the InN nanocolumns showed higher growth rate and stronger photoluminescence. XRD results indicated that InN nanocolumns were in good crystal quality with small tilt. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)