Negative differential resistance of gallium nitride nanowire networks deposited on an interdigitated electrode configuration patterned on a silicon dioxide/high resistivity Si substrate is experimentally demonstrated at room temperature. This effect is attributed to tunnelling between crossed gallium nitride nanowires.
No takes yet. Share an insight, caveat, or question.
Dragoman et al. (2010) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: