Defect-induced negative differential resistance of GaN nanowires measured by conductive atomic force microscopy

We report on negative differential resistance (NDR) from individual GaN nanowires prepared without catalysts by thermal chemical vapor deposition. Conductive atomic force microscopy was used to characterize the electron transport behavior and transmission electron microscopy was employed to characterize the microstructure of the GaN nanowires. The current-voltage curve exhibits two clear NDR regions in the forward bias. The defect assisted inelastic tunneling process resulting in the NDR behavior and the related mechanism for energy band diagram is proposed and discussed.