Al-(0.7-1.4 wt%) Cu alloy films for LSI interconnects were formed, for the first time, by a metalorganic chemical vapor deposition method, using dimethylaluminumhydride ((CH3)2AlH) and cyclopentadienylcoppertriethylphosphine ((C5H5)CuP(C2H5)3) as precursors. The depth profile of Auger electron spectroscopy showed that the deposited films had a uniform Cu distribution. The transmission electron microscopy (TEM) and electron diffraction analyses confirmed the presence of CuAl2 precipitates in the films.
No takes yet. Share an insight, caveat, or question.
Katagiri et al. (1993) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: