Semipolar GaInN quantum well structures on large area substrates

In order to deposit semipolar GaN layers on foreign substrates while still starting the growth along the c‐direction, we have etched trenches into r‐plane and n‐plane sapphire wafers. The GaN MOVPE growth then starts from c‐plane‐like sidewalls of these trenches, eventually leading to semipolar \ 112̄2\ and \ 101̄1\ surfaces with very good properties. GaInN quantum wells grown on such surfaces show very uniform properties on \ 101̄1\ surfaces, but still reflect the stripe geometry on \ 112̄2\ surfaces by a slightly larger In uptake at the stripe coalescence regions. magnified image Semipolar GaN stripes with top \ 101̄1\ surface grown on grooved n‐plane sapphire.