The Japan Electronic Industry Development Association has performed a round‐robin analysis of photoluminescence (PL) and resistivity measurements of Si standard samples to obtain calibration curves for determining the concentrations of Al and As impurities in Si crystals by the PL method. Standard samples were specially prepared in concentration ranges between 5 × 10 12 cm − 3 and 2 × 10 15 cm − 3 for Al impurity and between 4 × 10 12 cm − 3 and 1 × 10 14 cm − 3 for As impurity. PL measurement of the samples was performed by eight laboratories following the standard method proposed by American Standards for Testing and Materials. The Al and As concentrations of the samples were determined by resistivity measurement by three laboratories together with the PL measurement for residual B and P concentrations. Accuracy of the PL method using the obtained calibration curves is estimated to be within ±30% deviation.
No takes yet. Share an insight, caveat, or question.
Tajima et al. (1990) studied this question.