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September 1, 1998Journal of Applied Physics

Band-gap changes and band offsets for ternary Si1−x−yGexCy alloys on Si(001)

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HOH. J. OstenLeibniz University Hannover

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H. J. Osten (1998) studied this question.

synapsesocial.com/papers/6ab8c0bc3c855ec4769763edhttps://doi.org/10.1063/1.368383
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  1. 1Piezo-Electroreflectance in Ge, GaAs, and Si1968 · 854 citations
  2. 2X-ray photoelectron spectroscopic evaluation of valence band offsets for strained Si1−xGex, Si1−yCy, and Si1−x−yGexCy on Si(001)1997 · 35 citations
  3. 3Strain relaxation in tensile-strained layers on Si(001)1996 · 46 citations