A MgO-based magnetic tunnel junction (MTJ) sensor including 72 MTJs in series with 50 × 50 μm2 was successfully microfabricated. Due to a two-step annealing strategy, a linear transfer curve was obtained. The tunneling magnetoresistance (TMR) value is as high as 159% and the sensitivity reaches 2.9%/Oe. The field detectivity exhibits the lowest value at 1 V bias current, attaining 1.76 nT/Hz0.5 and 170 pT/Hz0.5 for 10 Hz and 1 kHz, respectively. The results show that the sensor could be applied in non-destructive testing systems which are used for detecting small defects inside conductive materials.
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Guo et al. (2014) studied this question.
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