The defect properties of rapidly thermally oxidized porous silicon are studied by electron paramagnetic resonance. Two different types of defects can be distinguished. One is very similar to the defects observed in damaged crystalline or amorphous Si, whereas the second one is closely related to the Pb center. A maximum defect density of 8×1018 cm−3 is observed for samples annealed at about 600 °C. The intensity of the photoluminescence band at 1.7 eV anticorrelates with the density of the defects.
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Meyer et al. (1993) studied this question.
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