For automobile applications, a high-speed switching 48-to-5 V dc–dc buck converter is implemented in the 0.5- μ m CMOS and 0.5- μ m gallium nitride (GaN)-on-Si processes. This proposed converter includes a pre-charge tracking technique, a temperature-dependent controlled gate driver, and an adaptive relaxation gate drive control technique. The measurement results of this article show that the efficiency can be increased by about 10.3% and can ensure the driving current capacity of enhance GaN (E-GaN). The built-in local negative feedback loop improves the reliability and reduces RON by 21% to reach the peak efficiency as high as 95.4%.
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Yang et al. (2022) studied this question.
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