Variability Improvement by Interface Passivation and EOT Scaling of InGaAs Nanowire MOSFETs

High-performance InGaAs gate-all-around (GAA) nanowire MOSFETs with channel length (Lch) down to 20 nm are fabricated by integrating a higherkLaAlO3-based gate-stack with an equivalent oxide thickness of 1.2 nm. It is found that inserting an ultrathin (0.5 nm) Al2O3interfacial layer between the higherkLaAlO3and InGaAs can significantly improve the interface quality and reduce device variation. As a result, a record low subthreshold swing of 63 mV/dec is demonstrated at sub-80-nmLchfor the first time, making InGaAs GAA nanowire devices a strong candidate for future low-power transistors.