Correlation of Gate Capacitance with Drive Current and Transconductance in Negative Capacitance Ge PFETs

Correlation of gate capacitance CG with drive current IDS and transconductance Gmin negative capacitance (NC) Ge pFETs is first investigated. Hysteresis-free NC Ge pFETs integrated with 4.5-nm HZO achieving the improved IDSand Gmover the control devices are fabricated. A peak in the CGversus gate voltage curve is demonstrated in the NC Ge pFET, indicating the NC effect induced by HZO film. It is observed that IDSand Gmof the NC transistors are enhanced as the CGpeak gets increased. This is attributed to the fact that, as the device operates in the NC region, both CGand internal gate voltage amplification are proportional to CFE/(CFE + CMOS), where CFEand CMOS are the NC of HZO and the MOS capacitance of the device, respectively.